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| 8 Mbit LPC Flash SST49LF080A SST49LF080A8 Mbit LPC Flash Data Sheet FEATURES: * LPC Interface Flash - SST49LF080A: 1024K x8 (8 Mbit) * Conforms to Intel LPC Interface Specification 1.0 * Flexible Erase Capability - Uniform 4 KByte Sectors - Uniform 64 KByte overlay blocks - 64 KByte Top Boot Block protection - Chip-Erase for PP Mode Only * Single 3.0-3.6V Read and Write Operations * Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention * Low Power Consumption - Active Read Current: 6 mA (typical) - Standby Current: 10 A (typical) * Fast Sector-Erase/Byte-Program Operation - Sector-Erase Time: 18 ms (typical) - Block-Erase Time: 18 ms (typical) - Chip-Erase Time: 70 ms (typical) - Byte-Program Time: 14 s (typical) - Chip Rewrite Time: 16 seconds (typical) - Single-pulse Program or Erase - Internal timing generation * Two Operational Modes - Low Pin Count (LPC) Interface mode for in-system operation - Parallel Programming (PP) Mode for fast production programming * LPC Interface Mode - 5-signal communication interface supporting byte Read and Write - 33 MHz clock frequency operation - WP# and TBL# pins provide hardware write protect for entire chip and/or top boot block - Standard SDP Command Set - Data# Polling and Toggle Bit for End-of-Write detection - 5 GPI pins for system design flexibility - 4 ID pins for multi-chip selection * Parallel Programming (PP) Mode - 11-pin multiplexed address and 8-pin data I/O interface - Supports fast programming In-System on programmer equipment * CMOS and PCI I/O Compatibility * Packages Available - 32-lead PLCC - 32-lead TSOP (8mm x 14mm) PRODUCT DESCRIPTION The SST49LF080A flash memory device is designed to interface with the LPC bus for PC and Internet Appliance application in compliance with Intel Low Pin Count (LPC) Interface Specification 1.0. Two interface modes are supported: LPC mode for in-system operations and Parallel Programming (PP) mode to interface with programming equipment. The SST49LF080A flash memory device is manufactured with SST's proprietary, high-performance SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST49LF080A device significantly improves performance and reliability, while lowering power consumption. The SST49LF080A device writes (Program or Erase) with a single 3.0-3.6V power supply. It uses less energy during Erase and Program than alternative flash memory technologies. The total energy consumed is a function of the applied voltage, current and time of application. For any give voltage range, the SuperFlash technology uses less current to program and has a shorter erase time; the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST49LF080A product provides a maximum Byte-Program time of 20 sec. The entire memory can be erased and programmed byte-bybyte typically in 16 seconds when using status detection features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. The SuperFlash technology provides fixed Erase and Program time, independent of the number of Erase/Program cycles that have performed. Therefore the system software or hardware does not have to be calibrated or correlated to the cumulative number of Erase cycles as is necessary with alternative flash memory technologies, whose Erase and Program time increase with accumulated Erase/Program cycles. To meet high density, surface mount requirements, the SST49LF080A device is offered in 32-lead TSOP and 32lead PLCC packages. See Figures 1 and 2 for pin assignments and Table 1 for pin descriptions. (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. Intel is a registered trademark of Intel Corporation. These specifications are subject to change without notice. 8 Mbit LPC Flash SST49LF080A Data Sheet TABLE OF CONTENTS PRODUCT DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 LIST OF FIGURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 LIST OF TABLES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 FUNCTIONAL BLOCK DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 PIN ASSIGNMENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 DEVICE MEMORY MAPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DESIGN CONSIDERATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 PRODUCT IDENTIFICATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 MODE SELECTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 LPC MODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 CE# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 LFRAME# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 TBL#, WP# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 INIT#, RST# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 System Memory Mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Response To Invalid Fields. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Abort Mechanism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Write Operation Status Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Data# Polling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Toggle Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Multiple Device Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Registers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 General Purpose Inputs Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 JEDEC ID Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 2 8 Mbit LPC Flash SST49LF080A Data Sheet PARALLEL PROGRAMMING MODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Reset. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Byte-Program Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Sector-Erase Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Block-Erase Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Chip-Erase Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Write Operation Status Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Data# Polling (DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Toggle Bit (DQ6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Data Protection (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Hardware Data Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Software Data Protection (SDP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 SOFTWARE COMMAND SEQUENCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 ELECTRICAL SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 PRODUCT ORDERING INFORMATION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 PACKAGING DIAGRAMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 3 8 Mbit LPC Flash SST49LF080A Data Sheet LIST OF FIGURES FIGURE 1: Pin Assignments for 32-lead PLCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 FIGURE 2: Pin Assignments for 32-lead TSOP (8mm x 14mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 FIGURE 3: Device Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 FIGURE 4: LPC Read Cycle Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 FIGURE 5: LPC Write Cycle Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 FIGURE 6: Program Command Sequence (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 FIGURE 7: Data# Polling Command Sequence (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 FIGURE 8: Toggle Bit Command Sequence (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 FIGURE 9: Sector-Erase Command Sequence (LPC Mode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 FIGURE 10: Block-Erase Command Sequence (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 FIGURE 11: Register Readout Command Sequence (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 FIGURE 12: LCLK Waveform (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 FIGURE 13: Reset Timing Diagram (LPC Mode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 FIGURE 14: Output Timing Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 FIGURE 15: Input Timing Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 FIGURE 16: Reset Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 FIGURE 17: Read Cycle Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 FIGURE 18: Write Cycle Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 FIGURE 19: Data# Polling Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 FIGURE 20: Toggle Bit Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 FIGURE 21: Byte-Program Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 FIGURE 22: Sector-Erase Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 FIGURE 23: Block-Erase Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 FIGURE 24: Chip-Erase Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 FIGURE 25: Software ID Entry and Read (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 FIGURE 26: Software ID Exit (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 FIGURE 27: AC Input/Output Reference Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 FIGURE 28: A Test Load Example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 FIGURE 29: Read Flowchart (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 FIGURE 30: Byte-Program Flowchart (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 FIGURE 31: Erase Command Sequences Flowchart (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 FIGURE 32: Software Product ID Command Sequences Flowchart (LPC Mode) . . . . . . . . . . . . . . . . . . . . 42 FIGURE 33: Byte-Program Command Sequences Flowchart (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . 43 FIGURE 34: Wait Options Flowchart (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 FIGURE 35: Software Product ID Command Sequences Flowchart (PP Mode) . . . . . . . . . . . . . . . . . . . . . 45 FIGURE 36: Erase Command Sequence Flowchart (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 4 8 Mbit LPC Flash SST49LF080A Data Sheet LIST OF TABLES TABLE 1: Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 TABLE 2: Product Identification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 TABLE 3: Address bits definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 TABLE 4: Address Decoding Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 TABLE 5: LPC Read Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 TABLE 6: LPC Write Cycle. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 TABLE 7: Multiple Device Selection Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 TABLE 8: General Purpose Inputs Register. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 TABLE 9: Memory Map Register Addresses for SST49LF080A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 TABLE 10: Operation Modes Selection (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 TABLE 11: Software Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 TABLE 12: DC Operating Characteristics (All Interfaces) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 TABLE 13: Recommended System Power-up Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 TABLE 14: Pin Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 TABLE 15: Reliability Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 TABLE 16: Clock Timing Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 TABLE 17: Reset Timing Parameters, VDD=3.0-3.6V (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 TABLE 18: Read/Write Cycle Timing Parameters, VDD=3.0-3.6V (LPC Mode) . . . . . . . . . . . . . . . . . . . . . 31 TABLE 19: AC Input/Output Specifications (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 TABLE 20: Interface Measurement Condition Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . 32 TABLE 21: Read Cycle Timing Parameters, VDD=3.0-3.6V (PP Mode). . . . . . . . . . . . . . . . . . . . . . . . . . . 33 TABLE 22: Program/Erase Cycle Timing Parameters, VDD=3.0-3.6V (PP Mode) . . . . . . . . . . . . . . . . . . . 33 TABLE 23: Reset Timing Parameters, VDD=3.0-3.6V (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 TABLE 24: Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 5 8 Mbit LPC Flash SST49LF080A Data Sheet FUNCTIONAL BLOCK DIAGRAM FUNCTIONAL BLOCK DIAGRAM TBL# WP# INIT# X-Decoder LAD[3:0] LCLK LFRAME# ID[3:0] GPI[4:0] R/C# A[10:0] DQ[7:0] OE# WE# Control Logic I/O Buffers and Data Latches LPC Interface Address Buffers & Latches Y-Decoder SuperFlash Memory Programmer Interface MODE RST# CE# 1235 B1.0 (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 6 8 Mbit LPC Flash SST49LF080A Data Sheet PIN ASSIGNMENTS RST# (RST#) VDD (VDD) R/C# (LCLK) A8 (GPI2) A9 (GPI3) A7(GPI1) A6 (GPI0) A5 (WP#) A4 (TBL#) A3 (ID3) A2 (ID2) A1 (ID1) A0 (ID0) DQ0 (LAD0) 5 6 7 8 9 10 11 12 13 4 3 2 NC 1 32 31 30 29 28 27 26 25 24 23 22 A10 (GPI4) MODE (MODE) NC (CE#) NC NC VDD (VDD) OE# (INIT#) WE# (LFRAME#) NC DQ7 (RES) 32-lead PLCC Top View 21 14 15 16 17 18 19 20 DQ4 (RES) DQ5 (RES) DQ1 (LAD1) DQ2 (LAD2) DQ3 (LAD3) DQ6 (RES) VSS (VSS) ( ) Designates LPC Mode 1235 32-plcc P1.0 FIGURE 1: PIN ASSIGNMENTS FOR 32-LEAD PLCC NC NC NC NC (CE#) MODE (MODE) A10 (GPI4) R/C# (LCLK) VDD (VDD) NC RST# (RST#) A9 (GPI3) A8 (GPI2) A7 (GPI1) A6 (GPI0) A5 (WP#) A4 (TBL#) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Standard Pinout Top View Die Up 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1235 32-tsop P2.0 OE# (INIT#) WE# (LFRAME#) VDD (VDD) DQ7 (RES) DQ6 (RES) DQ5 (RES) DQ4 (RES) DQ3 (LAD3) VSS (VSS) DQ2 (LAD2) DQ1 (LAD1) DQ0 (LAD0) A0 (ID0) A1 (ID1) A2 (ID2) A3 (ID3) ( ) Designates LPC Mode FIGURE 2: PIN ASSIGNMENTS FOR 32-LEAD TSOP (8MM X 14MM) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 7 8 Mbit LPC Flash SST49LF080A Data Sheet TABLE 1: PIN DESCRIPTION Interface Symbol A10-A0 Pin Name Address Type1 I PP LPC Functions X Inputs for low-order addresses during Read and Write operations. Addresses are internally latched during a Write cycle. For the programming interface, these addresses are latched by R/C# and share the same pins as the high-order address inputs. X To output data during Read cycles and receive input data during Write cycles. Data is internally latched during a Write cycle. The outputs are in tri-state when OE# is high. X To gate the data output buffers. X To control the Write operations. X X This pin determines which interface is operational. When held high, programmer mode is enabled and when held low, LPC mode is enabled. This pin must be setup at power-up or before return from reset and not change during device operation. This pin must be held high (VIH) for PP mode and low (VIL) for LPC mode. X This is the second reset pin for in-system use. This pin is internally combined with the RST# pin; If this pin or RST# pin is driven low, identical operation is exhibited. X These four pins are part of the mechanism that allows multiple parts to be attached to the same bus. The strapping of these pins is used to identify the component.The boot device must have ID[3:0]=0000 for all subsequent devices should use sequential up-count strapping. These pins are internally pulled-down with a resistor between 20-100 K X These individual inputs can be used for additional board flexibility. The state of these pins can be read through LPC registers. These inputs should be at their desired state before the start of the PCI clock cycle during which the read is attempted, and should remain in place until the end of the Read cycle. Unused GPI pins must not be floated. X When low, prevents programming to the boot block sectors at top of memory. When TBL# is high it disables hardware write protection for the top block sectors. This pin cannot be left unconnected. X To provide LPC control signals, as well as addresses and Command Inputs/Outputs data. X To provide a clock input to the control unit X To indicate start of a data transfer operation; also used to abort an LPC cycle in progress. X X To reset the operation of the device X When low, prevents programming to all but the highest addressable blocks. When WP# is high it disables hardware write protection for these blocks. This pin cannot be left unconnected. X Select for the Programming interface, this pin determines whether the address pins are pointing to the row addresses, or to the column addresses. X These pins must be left unconnected. X X To provide power supply (3.0-3.6V) X X Circuit ground (0V reference) X This signal must be asserted to select the device. When CE# is low, the device is enabled. When CE# is high, the device is placed in low power standby mode. X X Unconnected pins. T1.0 1235 DQ7-DQ0 Data I/O OE# WE# MODE Output Enable Write Enable Interface Mode Select I I I INIT# Initialize I ID[3:0] Identification Inputs I GPI[4:0] General Purpose Inputs I TBL# Top Block Lock I Address and Data LCLK Clock LFRAME# Frame RST# WP# Reset Write Protect LAD[3:0] I/O I I I I R/C# RES VDD VSS CE# NC Row/Column Select Reserved Power Supply Ground Chip Enable No Connection I PWR PWR I I 1. I=Input, O=Output (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 8 8 Mbit LPC Flash SST49LF080A Data Sheet DEVICE MEMORY MAPS TBL# Block 15 Block 14 Block 13 Block 12 Block 11 Block 10 Block 9 Block 8 Block 7 Block 6 Block 5 Block 4 Block 3 Block 2 Block 1 0FFFFFH Boot Block 0F0000H 0EFFFFH 0E0000H 0DFFFFH 0D0000H 0CFFFFH 0C0000H 0BFFFFH 0B0000H 0AFFFFH 0A0000H 09FFFFH 090000H 08FFFFH 080000H 07FFFFH 070000H 06FFFFH 060000H 05FFFFH 050000H 04FFFFH 040000H 03FFFFH 030000H 02FFFFH 020000H 01FFFFH 010000H 00FFFFH 4 KByte Sector 15 WP# for Block 0~14 Block 0 (64 KByte) 002000H 001000H 000000H 4 KByte Sector 2 4 KByte Sector 1 4 KByte Sector 0 1235 F03.0 FIGURE 3: DEVICE MEMORY MAP (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 9 8 Mbit LPC Flash SST49LF080A Data Sheet DESIGN CONSIDERATIONS SST recommends a high frequency 0.1 F ceramic capacitor to be placed as close as possible between VDD and VSS less than 1 cm away from the VDD pin of the device. Additionally, a low frequency 4.7 F electrolytic capacitor from VDD to VSS should be placed within 5 cm of the VDD pin. If you use a socket for programming purposes add an additional 1-10 F next to each socket. LPC MODE Device Operation The LPC mode uses a 5-signal communication interface, a 4-bit address/data bus, LAD[3:0], and a control line, LFRAME#, to control operations of the SST49LF080A. Cycle type operations such as Memory Read and Memory Write are defined in Intel Low Pin Count Interface Specification, Revision 1.0. JEDEC Standard SDP (Software Data Protection) Program and Erase commands sequences are incorporated into the standard LPC memory cycles. See Figures 6 through 11 for command sequences. LPC signals are transmitted via the 4-bit Address/Data bus (LAD[3:0]), and follow a particular sequence, depending on whether they are Read or Write operations. LPC memory Read and Write cycle is defined in Tables 5 and 6. Both LPC Read and Write operations start in a similar way as shown in Figures 4 and 5. The host (which is the term used here to describe the device driving the memory) asserts LFRAME# for two or more clocks and drives a start value on the LAD[3:0] bus. At the beginning of an operation, the host may hold the LFRAME# active for several clock cycles, and even change the Start value. The LAD[3:0] bus is latched every rising edge of the clock. On the cycle in which LFRAME# goes inactive, the last latched value is taken as the Start value. CE# must be asserted one cycle before the start cycle to select the SST49LF080A for Read and Write operations. Once the SST49LF080A identifies the operation as valid (a start value of all zeros), it next expects a nibble that indicates whether this is a memory Read or Write cycle. Once this is received, the device is now ready for the Address cycles. The LPC protocol supports a 32-bit address phase. The SST49LF080A encodes ID and register space access in the address field. See Table 3 for address bits definition. For Write operation the Data cycle will follow the Address cycle, and for Read operation TAR and SYNC cycles occur between the Address and Data cycles. At the end of every operation, the control of the bus must be returned to the host by a 2-clock TAR cycle. PRODUCT IDENTIFICATION The Product Identification mode identifies the device as the SST49LF080A and manufacturer as SST. TABLE 2: PRODUCT IDENTIFICATION Address Manufacturer's ID Device ID SST49LF080A 0001H 5BH T2.0 1235 Data BFH 0000H MODE SELECTION The SST49LF080A flash memory devices can operate in two distinct interface modes: the LPC mode and the Parallel Programming (PP) mode. The mode pin is used to set the interface mode selection. If the mode pin is set to logic High, the device is in PP mode. If the mode pin is set Low, the device is in the LPC mode. The mode selection pin must be configured prior to device operation. The mode pin is internally pulled down if the pin is left unconnected. In LPC mode, the device is configured to its host using standard LPC interface protocol. Communication between Host and the SST49LF080A occurs via the 4-bit I/O communication signals, LAD [3:0] and LFRAME#. In PP mode, the device is programmed via an 11-bit address and an 8-bit data I/O parallel signals. The address inputs are multiplexed in row and column selected by control signal R/C# pin. The row addresses are mapped to the lower internal addresses (A10-0), and the column addresses are mapped to the higher internal addresses (AMS-11). See Figure 3, the Device Memory Map, for address assignments. TABLE 3: ADDRESS A31: A25 1 BITS DEFINITION A24:A23 ID[3:2]2 A22 1 = Memory Access 0 = Register access A21: A20 ID[1:0]2 A19:A0 Device Memory address T3.1 1235 1111 111b or 0000 000b 1. The top 32MByte address range FFFF FFFFH to FE00 0000H and the bottom 128 KByte memory access address 000F FFFFH to 000E 0000H are decoded. 2. See Table 7 for multiple device selection configuration (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 10 8 Mbit LPC Flash SST49LF080A Data Sheet CE# The CE# pin, enables and disables the SST49LF080A, controlling read and write access of the device. To enable the SST49LF080A, the CE# pin must be driven low one clock cycle prior to LFRAME# being driven low. The device will enter standby mode when internal Write operations are completed and CE# is high. Both TBL# and WP# pins must be set to their required protection states prior to starting a Program or Erase operation. A logic level change occurring at the TBL# or WP# pin during a Program or Erase operation could cause unpredictable results. INIT#, RST# A VIL on INIT# or RST# pin initiates a device reset. INIT# and RST# pins have the same function internally. It is required to drive INIT# or RST# pins low during a system reset to ensure proper CPU initialization. During a Read operation, driving INIT# or RST# pins low deselects the device and places the output drivers, LAD[3:0], in a highimpedance state. The reset signal must be held low for a minimal duration of time TRSTP. A reset latency will occur if a reset procedure is performed during a Program or Erase operation. See Table 17, Reset Timing Parameters for more information. A device reset during an active Program or Erase will abort the operation and memory contents may become invalid due to data being altered or corrupted from an incomplete Erase or Program operation. LFRAME# The LFRAME# signifies the start of a (frame) bus cycle or the termination of an undesired cycle. Asserting LFRAME# for two or more clock cycle and driving a valid START value on LAD[3:0] will initiate device operation. The device will enter standby mode when internal operations are completed and LFRAME# is high. TBL#, WP# The Top Boot Lock (TBL#) and Write Protect (WP#) pins are provided for hardware write protection of device memory. The TBL# pin is used to Write-Protect 16 boot sectors (64 KByte) at the highest memory address range for the SST49LF080A. The WP# pin write protects the remaining sectors in the flash memory. An active low signal at the TBL# pin prevents Program and Erase operations of the top boot sectors. When TBL# pin is held high, the write protection of the top boot sectors is disabled. The WP# pin serves the same function for the remaining sectors of the device memory. The TBL# and WP# pins write protection functions operate independently of one another. TABLE 4: ADDRESS DECODING RANGE ID Strapping Device #0 - 3 Device #4 - 7 Device #8 - 11 Device #12 - 15 Device #01 Device Access Memory Access Register Access Memory Access Register Access Memory Access Register Access Memory Access Register Access Memory Access System Memory Mapping The LPC interface protocol has address length of 32-bit or 4 GByte. The SST49LF080A will respond to addresses in the range as specified in Table 4. Refer to "Multiple Device Selection" section for more detail on strapping multiple SST49LF080A devices to increase memory densities in a system and "Registers" section on valid register addresses. Address Range FFFF FFFFH : FFC0 0000H FFBF FFFFH : FF80 0000H FF7F FFFFH : FF40 0000H FF3F FFFFH : FF00 0000H FEFF FFFFH : FEC0 0000H FEBF FFFFH : FE80 0000H FE7F FFFFH : FE40 0000H FE3F FFFFH : FE00 0000H 000F FFFFH : 000E 0000H Memory Size 4 MByte 4 MByte 4 MByte 4 MByte 4 MByte 4 MByte 4 MByte 4 MByte 128 KByte T4.0 1235 1. For device #0 (Boot Device), SST49LF080A decodes the physical addresses of the top 2 blocks (including Boot Block) both at system memory ranges FFFF FFFFH to FFFE 0000H and 000F FFFFH to 000E 0000H. (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 11 8 Mbit LPC Flash SST49LF080A Data Sheet TABLE 5: LPC READ CYCLE Clock Cycle 1 Field Name START Field Contents LAD[3:0]1 0000 LAD[3:0] Direction IN Comments LFRAME# must be active (low) for the part to respond. Only the last start field (before LFRAME# transitions high) should be recognized. Indicates the type of cycle. Bits 3:2 must be "01b" for memory cycle. Bit 1 indicates the type of transfer "0" for Read. Bit 0 is reserved. Address Phase for Memory Cycle. LPC protocol supports a 32bit address phase. YYYY is one nibble of the entire address. Addresses are transferred most-significant nibble fist. See Table 3 for address bits definition and Table 4 for valid memory address range. In this clock cycle, the host has driven the bus to all 1s and then floats the bus. This is the first part of the bus "turnaround cycle." The SST49LF080A takes control of the bus during this cycle The SST49LF080A outputs the value 0000b indicating that data will be available during the next clock cycle. This field is the least-significant nibble of the data byte. This field is the most-significant nibble of the data byte. In this clock cycle, the host has driven the bus to all 1s and then floats the bus. This is the first part of the bus "turnaround cycle." The SST49LF080A takes control of the bus during this cycle T5.0 1235 2 3-10 CYCTYPE + DIR ADDRESS 010X YYYY IN IN 11 12 13 14 15 16 17 TAR0 TAR1 SYNC DATA DATA TAR0 TAR1 1111 1111 (float) 0000 ZZZZ ZZZZ 1111 1111 (float) IN then Float Float then OUT OUT OUT OUT IN then Float Float then OUT 1. Field contents are valid on the rising edge of the present clock cycle. CE# LCLK LFRAME# Start CYCTYPE + DIR 010Xb Address A[31:28] A[27:24] A[23:20] A[19:16] A[15:12] Load Address in 8 Clocks A[11:8] A[7:4] A[3:0] TAR0 1111b TAR1 Tri-State Sync 0000b D[3:0] Data D[7:4] TAR LAD[3:0] 0000b 1 Clock 1 Clock 2 Clocks 1 Clock Data Out 2 Clocks 1235 F04.0 FIGURE 4: LPC READ CYCLE WAVEFORM (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 12 8 Mbit LPC Flash SST49LF080A Data Sheet TABLE 6: LPC WRITE CYCLE Clock Cycle 1 Field Name START Field Contents LAD[3:0]1 0000 LAD[3:0] Direction IN Comments LFRAME# must be active (low) for the part to respond. Only the last start field (before LFRAME# transitions high) should be recognized. Indicates the type of cycle. Bits 3:2 must be "01b" for memory cycle. Bit 1 indicates the type of transfer "1" for Write. Bit 0 is reserved. Address Phase for Memory Cycle. LPC protocol supports a 32-bit address phase. YYYY is one nibble of the entire address. Addresses are transferred mostsignificant nibble first. See Table 3 for address bits definition and Table 4 for valid memory address range. This field is the least-significant nibble of the data byte. This field is the most-significant nibble of the data byte. In this clock cycle, the host has driven the bus to all `1's and then floats the bus. This is the first part of the bus "turnaround cycle." The SST49LF080A takes control of the bus during this cycle. The SST49LF080A outputs the values 0000, indicating that it has received data or a flash command. In this clock cycle, the SST49LF080A has driven the bus to all `1's and then floats the bus. This is the first part of the bus "turnaround cycle." Host resumes control of the bus during this cycle. T6.0 1235 2 CYCTYPE + DIR ADDRESS 011X IN 3-10 YYYY IN 11 12 13 DATA DATA TAR0 ZZZZ ZZZZ 1111 IN IN IN then Float 14 15 16 TAR1 SYNC TAR0 1111 (float) 0000 1111 Float then OUT OUT OUT then Float 17 TAR1 1111 (float) Float then IN 1. Field contents are valid on the rising edge of the present clock cycle. CE# LCLK LFRAME# Start CYCTYPE + DIR 011Xb Address A[31:28] A[27:24] A[23:20] A[19:16] A[15:12] Load Address in 8 Clocks A[11:8] A[7:4] A[3:0] Data D[3:0] Data D[7:4] TAR0 TAR1 Sync 0000b 1 Clock 1235 F05.0 TAR LAD[3:0] 0000b 1111b Tri-State 2 Clocks 1 Clock 1 Clock Load Data in 2 Clocks FIGURE 5: LPC WRITE CYCLE WAVEFORM (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 13 8 Mbit LPC Flash SST49LF080A Data Sheet Response To Invalid Fields During LPC Read/Write operations, the SST49LF080A will not explicitly indicate that it has received invalid field sequences. The response to specific invalid fields or sequences is as follows: Address out of range: The SST49LF080A will only respond to address ranges as specified in Table 4. ID mismatch: ID information is included in every address cycle. The SST49LF080A will compare ID bits in the address field with the hardware ID strapping. If there is a mis-match, the device will ignore the cycle. See Multiple Device Selection section for details. Once valid START, CYCTYPE + DIR, valid address range and ID bits are received, the SST49LF080A will always complete the bus cycle. However, if the device is busy performing a flash Erase or Program operation, no new internal Write command (memory write or register write) will be executed. As long as the states of LAD[3:0] and LAD[4] are known, the response of the SST49LF080A to signals received during the LPC cycle should be predictable. Write Operation Status Detection The SST49LF080A device provides two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system Write cycle time. The software detection includes two status bits: Data# Polling, D[7], and Toggle Bit, D[6]. The End-of-Write detection mode is incorporated into the LPC Read Cycle. The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either D[7] or D[6]. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid. Data# Polling When the SST49LF080A device is in the internal Program operation, any attempt to read D[7] will produce the complement of the true data. Once the Program operation is completed, D[7] will produce true data. Note that even though D[7] may have valid data immediately following the completion of an internal Write operation, the remaining data outputs may still be invalid: valid data on the entire data bus will appear in subsequent successive Read cycles after an interval of 1 s. During internal Erase operation, any attempt to read D[7] will produce a `0'. Once the internal Erase operation is completed, D[7] will produce a `1'. Proper status will not be given using Data# Polling if the address is in the invalid range. Toggle Bit During the internal Program or Erase operation, any consecutive attempts to read D[6] will produce alternating 0s and 1s, i.e., toggling between 0 and 1. When the internal Program or Erase operation is completed, the toggling will stop. Abort Mechanism If LFRAME# is driven low for one or more clock cycles after the start of an LPC cycle, the cycle will be terminated. The host may drive the LAD[3:0] with `1111b' (ABORT nibble) to return the interface to ready mode. The ABORT only affects the current bus cycle. For a multi-cycle command sequence, such as the Erase or Program SDP commands, ABORT doesn't interrupt the entire command sequence, but only the current bus cycle of the command sequence. The host can re-send the bus cycle and continue the SDP command sequence after the device is ready again. (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 14 8 Mbit LPC Flash SST49LF080A Data Sheet Multiple Device Selection Multiple LPC flash devices may be strapped to increase memory densities in a system. The four ID pins, ID[3:0], allow up to 16 devices to be attached to the same bus by using different ID strapping in a system. BIOS support, bus loading, or the attaching bridge may limit this number. The boot device must have an ID of 0 (determined by ID[3:0]); subsequent devices use incremental numbering. Equal density must be used with multiple devices. When used as a boot device, ID[3:0] must be strapped as 0000; all subsequent devices should use a sequential upcount strapping (i.e. 0001, 0010, 0011, etc.). With the hardware strapping, ID information is included in every LPC address memory cycle. The ID bits in the address field are inverse of the hardware strapping. The address bits [A24:A23, A21:A20] are used to select the device with proper IDs. See Table 7 for IDs. The SST49LF080A will compare these bits with ID[3:0]'s strapping values. If there is a mismatch, the device will ignore the remainder of the cycle. TABLE 7: MULTIPLE DEVICE SELECTION CONFIGURATION Hardware Strapping Device # 0 (Boot device) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 ID[3:0] 0000 0001 0010 0011 0100 0101 0110 0111 1000 1001 1010 1011 1100 1101 1110 1111 Address Bits Decoding A24 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 A23 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 A21 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 A20 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 T7.0 1235 Registers There are two registers available on the SST49LF080A, the General Purpose Inputs Registers (GPI_REG) and the JEDEC ID Registers. Since multiple LPC memory devices may be used to increase memory densities, these registers appear at its respective address location in the 4 GByte system memory map. Unused register locations will read as 00H. Any attempt to read registers during internal Write operation will respond as "Write operation status detection" (Data# Polling or Toggle Bit). Any attempt to write any registers during internal Write operation will be ignored. Table 9 lists GPI_REG and JEDEC ID address locations for SST49LF080A with its respective device strapping. TABLE 8: GENERAL PURPOSE INPUTS REGISTER Pin # Bit 7:5 4 Function Reserved GPI[4] Reads status of general purpose input pin GPI[3] Reads status of general purpose input pin GPI[2] Reads status of general purpose input pin GPI[1] Reads status of general purpose input pin GPI[0] Reads status of general purpose input pin 32-PLCC 30 32-TSOP 6 3 3 11 2 4 12 1 5 13 0 6 14 T8.0 1235 (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 15 8 Mbit LPC Flash SST49LF080A Data Sheet General Purpose Inputs Register The GPI_REG (General Purpose Inputs Register) passes the state of GPI[4:0] pins at power-up on the SST49LF080A. It is recommended that the GPI[4:0] pins be in the desired state before LFRAME# is brought low for the beginning of the next bus cycle, and remain in that state until the end of the cycle. There is no default value since this is a pass-through register. See the General Purpose Inputs Register table for the GPI_REG bits and function, and Table 9 for memory address locations for its respective device strapping. TABLE 9: MEMORY MAP REGISTER ADDRESSES Device # 0 (Boot device) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 FOR JEDEC ID Registers The JEDEC ID registers identify the device as SST49LF080A and manufacturer as SST in LPC mode. See Table 9 for memory address locations for its respective JEDEC ID location. SST49LF080A JEDEC ID GPI_REG FFBC 0100H FFAC 0100H FF9C 0100H FF8C 0100H FF3C 0100H FF2C 0100H FF1C 0100H FF0C 0100H FEBC 0100H FEAC 0100H FE9C 0100H FE8C 0100H FE3C 0100H FE2C 0100H FE1C 0100H FE0C 0100H Manufacturer FFBC 0000H FFAC 0000H FF9C 0000H FF8C 0000H FF3C 0000H FF2C 0000H FF1C 0000H FF0C 0000H FEBC 0000H FEAC 0000H FE9C 0000H FE8C 0000H FE3C 0000H FE2C 0000H FE1C 0000H FE0C 0000H Device FFBC 0001H FFAC 0001H FF9C 0001H FF8C 0001H FF3C 0001H FF2C 0001H FF1C 0001H FF0C 0001H FEBC 0001H FEAC 0001H FE9C 0001H FE8C 0001H FE3C 0001H FE2C 0001H FE1C 0001H FE0C 0001H T9.0 1235 Hardware Strapping ID[3:0] 0000 0001 0010 0011 0100 0101 0110 0111 1000 1001 1010 1011 1100 1101 1110 1111 (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 16 8 Mbit LPC Flash SST49LF080A Data Sheet PARALLEL PROGRAMMING MODE Device Operation Commands are used to initiate the memory operation functions of the device. The data portion of the software command sequence is latched on the rising edge of WE#. During the software command sequence the row address is latched on the falling edge of R/C# and the column address is latched on the rising edge of R/C#. Sector-Erase Operation The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The sector architecture is based on uniform sector size of 4 KByte. The Sector-Erase operation is initiated by executing a six-byte command load sequence for Software Data Protection with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit methods. See Figure 22 for Sector-Erase timing waveforms. Any commands written during the Sector-Erase operation will be ignored. Reset Driving the RST# low will initiate a hardware reset of the SST49LF080A. See Table 23 for Reset timing parameters and Figure 16 for Reset timing diagram. Read The Read operation of the SST49LF080A device is controlled by OE#. OE# is the output control and is used to gate data from the output pins. Refer to the Read cycle timing diagram, Figure 17, for further details. Block-Erase Operation The Block-Erase Operation allows the system to erase the device in 64 KByte uniform block size for the SST49LF080A. The Block-Erase operation is initiated by executing a six-byte command load sequence for Software Data Protection with Block-Erase command (50H) and block address. The internal Block-Erase operation begins after the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit methods. See Figure 23 for Block-Erase timing waveforms. Any commands written during the Block-Erase operation will be ignored. Byte-Program Operation The SST49LF080A device is programmed on a byte-bybyte basis. Before programming, one must ensure that the sector in which the byte is programmed is fully erased. The Byte-Program operation is initiated by executing a four-byte command load sequence for Software Data Protection with address (BA) and data in the last byte sequence. During the Byte-Program operation, the row address (A10-A0) is latched on the falling edge of R/C# and the column address (A21-A11) is latched on the rising edge of R/C#. The data bus is latched on the rising edge of WE#. The Program operation, once initiated, will be completed, within 20 s. See Figure 21 for Program operation timing diagram and Figure 33 for its flowchart. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands written during the internal Program operation will be ignored. Chip-Erase Operation The SST49LF080A devices provide a Chip-Erase operation, which allows the user to erase the entire memory array to the "1s" state. This is useful when the entire device must be quickly erased. The Chip-Erase operation is initiated by executing a sixbyte Software Data Protection command sequence with Chip-Erase command (10H) with address 5555H in the last byte sequence. The internal Erase operation begins with the rising edge of the sixth WE#. During the internal Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 11 for the command sequence, Figure 24 for Chip-Erase timing diagram, and Figure 36 for the flowchart. Any commands written during the Chip-Erase operation will be ignored. (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 17 8 Mbit LPC Flash SST49LF080A Data Sheet Write Operation Status Detection The SST49LF080A devices provide two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system Write cycle time. The software detection includes two status bits: Data# Polling D[7] and Toggle Bit D[6]. The End-of-Write detection mode is enabled after the rising edge of WE# which initiates the internal Program or Erase operation. The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either D[7] or D[6]. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid. Data# Polling (DQ7) When the SST49LF080A device is in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. Note that even TABLE 10: OPERATION MODES SELECTION (PP MODE) Mode Read Program Erase Reset Write Inhibit Product Identification RST# OE# VIL WE# though DQ7 may have valid data immediately following the completion of an internal Write operation, the remaining data outputs may still be invalid: valid data on the entire data bus will appear in subsequent successive Read cycles after an interval of 1 s. During internal Erase operation, any attempt to read DQ7 will produce a `0'. Once the internal Erase operation is completed, DQ7 will produce a `1'. The Data# Polling is valid after the rising edge of fourth WE# pulse for Program operation. For Sector-, Block-, or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# pulse. See Figure 19 for Data# Polling timing diagram and Figure 34 for a flowchart. Proper status will not be given using Data# Polling if the address is in the invalid range. Toggle Bit (DQ6) During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating `0's and `1's, i.e., toggling between 0 and 1. When the internal Program or Erase operation is completed, the toggling will stop. The device is then ready for the next operation. The Toggle Bit is valid after the rising edge of fourth WE# pulse for Program operation. For Sector-, Block-, or Chip-Erase, the Toggle Bit is valid after the rising edge of sixth WE# pulse. See Figure 20 for Toggle Bit timing diagram and Figure 34 for a flowchart. DQ DOUT DIN X1 High Z High Z/DOUT High Z/DOUT Manufacturer's ID (BFH) Device ID2 Address AIN AIN Sector or Block address, XXH for Chip-Erase X X X See Table 11 T10.0 1235 VIH VIH VIH VIL VIH VIL VIL X X VIH VIH X VIL VIH X X VIL VIH VIH VIH 1. X can be VIL or VIH, but no other value. 2. Device ID = 5BH for SST49LF080A (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 18 8 Mbit LPC Flash SST49LF080A Data Sheet Data Protection (PP Mode) The SST49LF080A devices provide both hardware and software features to protect nonvolatile data from inadvertent writes. Hardware Data Protection Noise/Glitch Protection: A WE# pulse of less than 5 ns will not initiate a Write cycle. VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.5V. Write Inhibit Mode: Forcing OE# low, WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down. Software Data Protection (SDP) The SST49LF080A provides the JEDEC approved Software Data Protection scheme for all data alteration operation, i.e., Program and Erase. Any Program operation requires the inclusion of a series of three-byte sequence. The three-byte load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or power-down. Any Erase operation requires the inclusion of a six-byte load sequence. (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 19 8 Mbit LPC Flash SST49LF080A Data Sheet SOFTWARE COMMAND SEQUENCE TABLE 11: SOFTWARE COMMAND SEQUENCE Command Sequence Byte-Program Sector-Erase Block-Erase Chip-Erase6 Software ID Entry Software ID Exit8 Software ID Exit8 1st1 Cycle Addr2 YYYY 5555H YYYY 5555H YYYY 5555H YYYY 5555H YYYY 5555H 2nd1 Cycle Data AAH AAH AAH AAH AAH 3rd1 Cycle Data 55H 55H 55H 55H 55H 4th1 Cycle Data A0H 80H 80H 80H 90H 5th1 Cycle Data Data AAH AAH AAH YYYY 2AAAH YYYY 2AAAH YYYY 2AAAH 55H 55H 55H 6th1 Cycle Data Addr2 SAX4 BAX5 YYYY 5555H Addr2 YYYY 2AAAH YYYY 2AAAH YYYY 2AAAH YYYY 2AAAH YYYY 2AAAH Addr2 YYYY 5555H YYYY 5555H YYYY 5555H YYYY 5555H YYYY 5555H Addr2 PA3 YYYY 5555H YYYY 5555H YYYY 5555H Read ID7 Addr2 Data 30H 50H 10H XXXX XXXXH F0H YYYY 5555H AAH YYYY 2AAAH 55H YYYY 5555H F0H T11.0 1235 1. LPC mode use consecutive Write cycles to complete a command sequence; PP mode use consecutive bus cycles to complete a command sequence. 2. YYYY = A[31:16]. In LPC mode, during SDP command sequence, YYYY must be within memory address range specified in Table 4. In PP mode, YYYY can be VIL or VIH, but no other value. 3. PA = Program Byte address 4. SAX for Sector-Erase Address 5. BAX for Block-Erase Address 6. Chip-Erase is supported in PP mode only 7. SST Manufacturer's ID = BFH, is read with A0 = 0. With A19-A1 = 0; SST49LF080A Device ID = 5BH, is read with A0 = 1. 8. Both Software ID Exit operations are equivalent (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 20 8 Mbit LPC Flash SST49LF080A Data Sheet CE# LCLK LFRAME# Memory Write Cycle 011Xb Address1 A[31:28] A[27:24] A[23:20] A[19:16] 0101b 0101b 0101b 0101b 1010b Start next Command TAR 1 Clock LAD[3:0] 1st Start 0000b Data 1010b TAR 1111b Sync Tri-State 0000b 1 Clock 1 Clock 1 Clock Load Address "YYYY 5555H" in 8 Clocks Load Data "AAH" in 2 Clocks 2 Clocks Write the 1st command to the device in LPC mode. CE# LCLK LFRAME# 2nd Start 0000b Memory Write Cycle 011Xb Address1 A[31:28] A[27:24] A[23:20] A[19:16] 0010b 1010b 1010b 1010b Data 0101b 0101b TAR 1111b Sync TAR 1 Clock Start next Command LAD[3:0] Tri-State 0000b 1 Clock 1 Clock 1 Clock Load Address "YYYY 2AAAH" in 8 Clocks Load Data "55H" in 2 Clocks 2 Clocks Write the 2nd command to the device in LPC mode. CE# LCLK LFRAME# 3rd Start 0000b 011Xb Address1 A[31:28] A[27:24] A[23:20] A[19:16] 0101b 0101b 0101b 0101b Data 0000b 1010b TAR 1111b Sync TAR 1 Clock Start next Command LAD[3:0] Tri-State 0000b 1 Clock 1 Clock 1 Clock Load Address "YYYY 5555H" in 8 Clocks Load Data "A0H" in 2 Clocks 2 Clocks Write the 3rd command to the device in LPC mode. CE# LCLK LFRAME# LAD[3:0] Memory Write 4th Start Cycle 0000b 011Xb Internal program start Address1 A[31:28] A[27:24] A[23:20] A[19:16] A[15:12] A[11:8] Load Ain in 8 Clocks A[7:4] A[3:0] Data D[3:0] D[7:4] 1111b TAR Sync TAR Internal program start Tri-State 0000b 1 Clock 1 Clock 1 Clock Load Data in 2 Clocks 2 Clocks Write the 4th command (target locations to be programmed) to the device in LPC mode. 1235 F06.0 Note: 1. Address must be within memory address range specified in Table 4. FIGURE 6: PROGRAM COMMAND SEQUENCE (LPC MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 21 8 Mbit LPC Flash SST49LF080A Data Sheet CE# LCLK LFRAME# LAD[3:0] 1st Start Memory Write Cycle A[31:28] A[27:24] A[23:20] Address1 A[19:16] A[15:12] A[11:8] A[7:4] A[3:0] D[3:0] Data Dn[7:4] TAR 1111b Tri-State 2 Clocks Sync 0000b 1 Clock TAR Start next Command 0000b 1 Clock 0000b 011Xb 1 Clock 1 Clock Load Address in 8 Clocks Load Data in 2 Clocks Write the last command (Program or Erase) to the device in LPC mode. CE# LCLK LFRAME# Memory Read Cycle 010Xb A[31:28] A[27:24] A[23:20] Next start Address1 A[19:16] A[15:12] A[11:8] A[7:4] A[3:0] TAR 1111b Sync Data XXXXb D7#,xxx TAR 0000b 1 Clock Tri-State 0000b 1 Clock LAD[3:0] Start 0000b 1 Clock 1 Clock 2 Clocks Load Address in 8 Clocks Read the DQ7 to see if internal write complete or not. Data out 2 Clocks CE# LCLK LFRAME# Memory Read Cycle 010Xb A[31:28] A[27:24] A[23:20] Next start Address1 A[19:16] A[15:12] A[11:8] A[7:4] A[3:0] TAR 1111b Tri-State 2 Clocks Sync 0000b Data XXXXb D7,xxx TAR 0000b 1 Clock LAD[3:0] Start 0000b 1 Clock 1 Clock Load Address in 8 Clocks When internal write complete, the DQ7 will equal to D7. 1 Clock Data out 2 Clocks 1235 F07.0 Note: 1. Address must be within memory address range specified in Table 4. FIGURE 7: DATA# POLLING COMMAND SEQUENCE (LPC MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 22 8 Mbit LPC Flash SST49LF080A Data Sheet CE# LCLK LFRAME# 1st Start 0000b Memory Write Cycle 011Xb A[31:28] A[27:24] A[23:20] Address1 A[19:16] A[15:12] A[11:8] A[7:4] A[3:0] Data D[3:0] D[7:4] TAR 1111b Tri-State 2 Clocks Sync 0000b 1 Clock TAR Start next Command 0000b 1 Clock LAD[3:0] 1 Clock 1 Clock Load Address in 8 Clocks Load Data in 2 Clocks Write the last command (Program or Erase) to the device in LPC mode. CE# LCLK LFRAME# Memory Read Cycle 010Xb A[31:28] A[27:24] A[23:20] Next start Address1 A[19:16] A[15:12] A[11:8] A[7:4] A[3:0] 1111b TAR Sync Data XXXXb X,D6#,XXb TAR 0000b 1 Clock LAD[3:0] Start 0000b Tri-State 0000b 1 Clock 1 Clock 1 Clock Load Address in 8 Clocks Read the DQ6 to see if internal write complete or not. 2 Clocks Data out 2 Clocks CE# LCLK LFRAME# Memory Read Cycle 010Xb A[31:28] A[27:24] A[23:20] Next start Address1 A[19:16] A[15:12] A[11:8] A[7:4] A[3:0] TAR 1111b Tri-State Sync 0000b Data XXXXb X,D6,XXb TAR 0000b 1 Clock 1235 F08.0 LAD[3:0] Start 0000b 1 Clock 1 Clock Load Address in 8 Clocks When internal write complete, the DQ6 will stop toggle. 2 Clocks 1 Clock Data out 2 Clocks Note: 1. Address must be within memory address range specified in Table 4. FIGURE 8: TOGGLE BIT COMMAND SEQUENCE (LPC MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 23 8 Mbit LPC Flash SST49LF080A Data Sheet CE# LCLK LFRAME# 1st Start 0000b Memory Write Cycle 011Xb Address1 A[31:28] A[27:24] A[23:20] A[19:16] 0101b 0101b 0101b 0101b Data 1010b 1010b TAR 1111b Sync TAR 1 Clock Start next Command LAD[3:0] Tri-State 0000b 1 Clock 1 Clock 1 Clock Load Address "YYYY 5555H" in 8 Clocks Load Data "AAH" in 2 Clocks 2 Clocks Write the 1st command to the device in LPC mode. CE# LCLK LFRAME# Memory Write Cycle 011Xb Address1 A[31:28] A[27:24] A[23:20] A[19:16] 0010b 1010b 1010b 1010b Start next Command TAR 1 Clock LAD[3:0] 2nd Start 0000b Data 0101b 0101b TAR 1111b Sync Tri-State 0000b 1 Clock 1 Clock 1 Clock Load Address "YYYY 2AAAH" in 8 Clocks Load Data "55H" in 2 Clocks 2 Clocks Write the 2nd command to the device in LPC mode. CE# LCLK LFRAME# 3rd Start Memory Write Cycle Address1 A[31:28] A[27:24] A[23:20] A[19:16] 0101b 0101b 0101b 0101b Data 0000b 1000b TAR 1111b Tri-State Sync 0000b 1 Clock TAR 1 Clock Start next Command LAD[3:0] 0000b 011Xb 1 Clock 1 Clock Load Address "YYYY 5555H" in 8 Clocks Load Data "80H" in 2 Clocks 2 Clocks Write the 3rd command to the device in LPC mode. CE# LCLK LFRAME# 4th Start Memory Write Cycle Address1 A[31:28] A[27:24] A[23:20] A[19:16] 0101b 0101b 0101b 0101b Data 1010b 1010b TAR 1111b Tri-State Sync 0000b 1 Clock TAR 1 Clock Start next Command LAD[3:0] 0000b 011Xb 1 Clock 1 Clock Load Address "YYYY 5555H" in 8 Clocks Load Data "AAH" in 2 Clocks 2 Clocks Write the 4th command to the device in LPC mode. CE# LCLK LFRAME# 5th Memory Write Cycle Address1 A[31:28] A[27:24] A[23:20] A[19:16] 0010b 1010b 1010b 1010b Data 0101b 0101b TAR 1111b Tri-State Sync 0000b 1 Clock TAR 1 Clock Start next Command LAD[3:0] 0000b 011Xb 1 Clock 1 Clock Load Address "YYYY 2AAA" in 8 ClocksH Load Data "55H" in 2 Clocks 2 Clocks Write the 5th command to the device in LPC mode. CE# LCLK Internal erase start LFRAME# 6th Start Memory Write Cycle 011Xb Address1 A[31:28] A[27:24] A[23:20] A[19:16] SAX XXXXb XXXXb XXXXb Data 0000b 0011b TAR 1111b Tri-State Sync 0000b 1 Clock TAR Internal erase start LAD[3:0] 0000b 1 Clock 1 Clock Load Sector Address in 8 Clocks Load Data "30" in 2 Clocks 2 Clocks 1235 F12.0 Write the 6th command (target sector to be erased) to the device in LPC mode. SAX = Sector Address Note: 1. Address must be within memory address range specified in Table 4. FIGURE 9: SECTOR-ERASE COMMAND SEQUENCE (LPC MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 24 8 Mbit LPC Flash SST49LF080A Data Sheet CE# LCLK LFRAME# 1st Start Memory Write Cycle 011Xb Address1 A[31:28] A[27:24] A[23:20] A[19:16] 0101b 0101b 0101b 0101b Data 1010b 1010b TAR 1111b Sync TAR 1 Clock Start next Command LAD[3:0] 0000b Tri-State 0000b 1 Clock 1 Clock 1 Clock Load Data "AAH" in 2 Clocks 2 Clocks Load Address "YYYY 5555H" in 8 Clocks Write the 1st command to the device in LPC mode. CE# LCLK LFRAME# 2nd Start Memory Write Cycle 011Xb Address1 A[31:28] A[27:24] A[23:20] A[19:16] 0010b 1010b 1010b 1010b Data 0101b 0101b TAR 1111b Tri-State Sync 0000b 1 Clock TAR 1 Clock Start next Command LAD[3:0] 0000b 1 Clock 1 Clock Load Address "YYYY 2AAAH" in 8 Clocks Load Data "55H" in 2 Clocks 2 Clocks Write the 2nd command to the device in LPC mode. CE# LCLK LFRAME# 3rd Start Memory Write Cycle 011Xb Address1 A[31:28] A[27:24] A[23:20] A[19:16] 0101b 0101b 0101b 0101b Data 0000b 1000b TAR 1111b Tri-State Sync 0000b 1 Clock TAR 1 Clock Start next Command LAD[3:0] 0000b 1 Clock 1 Clock Load Address "YYYY 5555H" in 8 Clocks Load Data "80H" in 2 Clocks 2 Clocks Write the 3rd command to the device in LPC mode. CE# LCLK LFRAME# 4th Start Memory Write Cycle Address1 A[31:28] A[27:24] A[23:20] A[19:16] 0101b 0101b 0101b 0101b Data 1010b 1010b 1111b TAR Tri-State Sync 0000b 1 Clock TAR 1 Clock Start next Command LAD[3:0] 0000b 011Xb 1 Clock 1 Clock Load Address "YYYY 5555H" in 8 Clocks Load Data "AAH" in 2 Clocks 2 Clocks Write the 4th command to the device in LPC mode. CE# LCLK LFRAME# 5th Memory Write Cycle 011Xb Address1 A[31:28] A[27:24] A[23:20] A[19:16] 0010b 1010b 1010b 1010b Data 0101b 0101b TAR 1111b Tri-State Sync 0000b 1 Clock TAR 1 Clock Start next Command LAD[3:0] 0000b 1 Clock 1 Clock Load Address "YYYY 2AAAH" in 8 Clocks Load Data "55H" in 2 Clocks 2 Clocks Write the 5th command to the device in LPC mode. CE# LCLK Internal erase start LFRAME# 6th Start Memory Write Cycle 011Xb Address1 A[31:28] A[27:24] A[23:20] A[19:16] BAX Load Block Address in 8 Clocks XXXXb XXXXb XXXXb Data 0000b 0101b TAR 1111b Sync TAR LAD[3:0] Internal erase start 0000b Tri-State 0000b 1 Clock 1 Clock 1 Clock Load Data "50" in 2 Clocks 2 Clocks Write the 6th command (target sector to be erased) to the device in LPC mode. BAX = Block Address 1235 F10.0 Note: 1. Address must be within memory address range specified in Table 4. FIGURE 10: BLOCK-ERASE COMMAND SEQUENCE (LPC MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 25 8 Mbit LPC Flash SST49LF080A Data Sheet CE# LCLK LFRAME# LAD[3:0] Start 0000b Memory Read Cycle 010Xb Address1 A[31:28] A[27:24] A[23:20] A[19:16] A[15:12] A[11:8] Load Address in 8 Clocks A[7:4] A[3:0] TAR 1111b Tri-State Sync 0000b 1 Clock Data D[3:0] D[7:4] TAR Start next 0000b 1 Clock 1235 F11.0 1 Clock 1 Clock 2 Clocks Data out 2 Clocks Note: 1. See Table 9 for register addresses. FIGURE 11: REGISTER READOUT COMMAND SEQUENCE (LPC MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 26 8 Mbit LPC Flash SST49LF080A Data Sheet ELECTRICAL SPECIFICATIONS The AC and DC specifications for the LPC interface signals (LA0[3:0], LFRAME, LCLCK and RST#) as defined in Section 4.2.2.4 of the PCI local Bus specification, Rev. 2.1. Refer to Table 12 for the DC voltage and current specifications. Refer to Tables 16 through 19 and Tables 21 through 23 for the AC timing specifications for Clock, Read, Write, and Reset operations. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this datasheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55C to +125C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C D.C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V Package Power Dissipation Capability (Ta=25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240C Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA 1. Outputs shorted for no more than one second. No more than one output shorted at a time. OPERATING RANGE Range Commercial Ambient Temp 0C to +85C VDD 3.0-3.6V AC CONDITIONS OF TEST Input Rise/Fall Time . . . . . . . . . . . . . . . 3 ns Output Load . . . . . . . . . . . . . . . . . . . . . CL = 30 pF See Figures 27 and 28 (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 27 8 Mbit LPC Flash SST49LF080A Data Sheet DC Characteristics TABLE 12: DC OPERATING CHARACTERISTICS (ALL INTERFACES) Limits Symbol Parameter IDD1 Active VDD Current Min Max Units Test Conditions LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT at f=33 MHz (LPC mode) or 1/TRC min (PP Mode) All other inputs=VIL or VIH 12 24 100 mA mA A All outputs = open, VDD=VDD Max See Note2 LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT at f=33 MHz (LPC mode) or 1/TRC min (PP Mode) LFRAME#=0.9 VDD, f=33 MHz, CE#=0.9 VDD, VDD=VDD Max, All other inputs 0.9 VDD or 0.1 VDD LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT at f=33 MHz (LPC mode) or 1/TRC min (PP Mode) LFRAME#=VIL, f=33 MHz, VDD=VDD Max All other inputs 0.9 VDD or 0.1 VDD VIN=GND to VDD, VDD=VDD Max VIN=GND to VDD, VDD=VDD Max VOUT=GND to VDD, VDD=VDD Max VDD=VDD Max VDD=VDD Min VDD=VDD Min VDD=VDD Max IOL=1500 A, VDD=VDD Min IOH=-500 A, VDD=VDD Min T12.0 1235 Read Write ISB Standby VDD Current (LPC Interface) IRY3 Ready Mode VDD Current (LPC Interface) 10 mA II ILI ILO VIHI VILI VIL Input Current for Mode and ID[3:0] pins Input Leakage Current Output Leakage Current INIT# Input High Voltage INIT# Input Low Voltage Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage 0.9 VDD 1.1 -0.5 -0.5 0.5 VDD 200 1 1 VDD+0.5 0.4 0.3 VDD VDD+0.5 0.1 VDD A A A V V V V V V VIH VOL VOH 1. IDD active while a Read or Write (Program or Erase) operation is in progress. 2. For PP Mode: OE# = WE# = VIH; For LPC Mode: f = 1/TRC min, LFRAME# = VIH, CE# = VIL. 3. The device is in Ready mode when no activity is on the LPC bus. TABLE 13: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol TPU-READ 1 Parameter Power-up to Read Operation Power-up to Write Operation Minimum 100 100 Units s s T13.0 1235 TPU-WRITE1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter TABLE 14: PIN CAPACITANCE Parameter CI/O 1 (VDD=3.3V, Ta=25 C, f=1 Mhz, other pins open) Description I/O Pin Capacitance Input Capacitance Test Condition VI/O=0V VIN=0V Maximum 12 pF 12 pF T14.0 1235 CIN1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 28 8 Mbit LPC Flash SST49LF080A Data Sheet TABLE 15: RELIABILITY CHARACTERISTICS Symbol NEND TDR 1 1 Parameter Endurance Data Retention Latch Up Minimum Specification 10,000 100 100 + IDD Units Cycles Years mA Test Method JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard 78 T15.0 1235 ILTH1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 16: CLOCK TIMING PARAMETERS (LPC MODE) Symbol TCYC THIGH TLOW Parameter LCLK Cycle Time LCLK High Time LCLK Low Time LCLK Slew Rate (peak-to-peak) RST# or INIT# Slew Rate Min 30 11 11 1 50 4 Max Units ns ns ns V/ns mV/ns T16.0 1235 Tcyc Thigh 0.6 VDD Tlow 0.5 VDD 0.4 VDD 0.3 VDD 0.2 VDD 1235 F12.0 0.4 VDD p-to-p (minimum) FIGURE 12: LCLK WAVEFORM (LPC MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 29 8 Mbit LPC Flash SST49LF080A Data Sheet TABLE 17: RESET TIMING PARAMETERS, VDD=3.0-3.6V (LPC MODE) Symbol TPRST TKRST TRSTP TRSTF TRST1 TRSTE Parameter VDD stable to Reset Low Clock Stable to Reset Low RST# Pulse Width RST# Low to Output Float RST# High to LFRAME# Low RST# Low to reset during Sector-/Block-Erase or Program 1 10 Min 1 100 100 48 Max Units ms s ns ns s s T17.0 1235 1. There may be additional latency due toTRSTE if a reset procedure is performed during a Program or Erase operation. VDD CLK TPRST TKRST RST#/INIT# TRSTP TRSTE TRSTF LAD[3:0] TRST Sector-/Block-Erase or Program operation aborted LFRAME# 1235 F13.0 FIGURE 13: RESET TIMING DIAGRAM (LPC MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 30 8 Mbit LPC Flash SST49LF080A Data Sheet AC Characteristics TABLE 18: READ/WRITE CYCLE TIMING PARAMETERS, VDD=3.0-3.6V (LPC MODE) Symbol TCYC TSU TDH TVAL1 TBP TSE TBE TON TOFF Parameter Clock Cycle Time Data Set Up Time to Clock Rising Clock Rising to Data Hold Time Clock Rising to Data Valid Byte Programming Time Sector-Erase Time Block-Erase Time Clock Rising to Active (Float to Active Delay) Clock Rising to Inactive (Active to Float Delay) 2 28 Min 30 7 0 2 11 20 25 25 Max Units ns ns ns ns s ms ms ns ns T18.0 1235 1. Minimum and maximum times have different loads. See PCI spec. TABLE 19: AC INPUT/OUTPUT SPECIFICATIONS (LPC MODE) Symbol IOH(AC) Parameter Switching Current High Min -12 VDD -17.1(VDD-VOUT) Equation C1 (Test Point) IOL(AC) Switching Current Low 16 VDD 26.7 VOUT -32 VDD Equation D1 mA mA mA mA mA mA 4 4 V/ns V/ns Max Units mA mA Conditions 0 < VOUT 0.3 VDD 0.3 VDD < VOUT < 0.9 VDD 0.7 VDD < VOUT < VDD VOUT = 0.7 VDD VDD >VOUT 0.6 VDD 0.6 VDD > VOUT > 0.1 VDD 0.18 VDD > VOUT > 0 VOUT = 0.18 VDD -3 < VIN -1 VDD+4 > VIN VDD+1 0.2 VDD-0.6 VDD load 0.6 VDD-0.2 VDD load T19.0 1235 (Test Point) ICL ICH slewr2 slewf2 Low Clamp Current High Clamp Current Output Rise Slew Rate Output Fall Slew Rate -25+(VIN+1)/0.015 25+(VIN-VDD-1)/0.015 1 1 38 VDD 1. See PCI spec. 2. PCI specification output load is used. (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 31 8 Mbit LPC Flash SST49LF080A Data Sheet VTH LCLK VTEST VTL TVAL LAD [3:0] (Valid Output Data) LAD [3:0] (Float Output Data) TON TOFF 1235 F14.0 FIGURE 14: OUTPUT TIMING PARAMETERS (LPC MODE) VTH LCLK TSU TDH LAD [3:0] (Valid Input Data) Inputs Valid VTEST VTL VMAX 1235 F15.0 FIGURE 15: INPUT TIMING PARAMETERS (LPC MODE) TABLE 20: INTERFACE MEASUREMENT CONDITION PARAMETERS (LPC MODE) Symbol VTH 1 Value 0.6 VDD 0.2 VDD 0.4 VDD 0.4 VDD 1 Units V V V V V/ns T20.0 1235 VTL1 VTEST VMAX1 Input Signal Edge Rate 1. The input test environment is done with 0.1 VDD of overdrive over VIH and VIL. Timing parameters must be met with no more overdrive than this. VMAX specified the maximum peak-to-peak waveform allowed for measuring input timing. Production testing may use different voltage values, but must correlate results back to these parameters (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 32 8 Mbit LPC Flash SST49LF080A Data Sheet TABLE 21: READ CYCLE TIMING PARAMETERS, VDD=3.0-3.6V (PP MODE) Symbol TRC TRST TAS TAH TAA TOE TOLZ TOHZ TOH Parameter Read Cycle Time RST# High to Row Address Setup R/C# Address Set-up Time R/C# Address Hold Time Address Access Time Output Enable Access Time OE# Low to Active Output OE# High to High-Z Output Output Hold from Address Change 0 0 35 Min 270 1 45 45 120 60 Max Units ns s ns ns ns ns ns ns ns T21.0 1235 TABLE 22: PROGRAM/ERASE CYCLE TIMING PARAMETERS, VDD=3.0-3.6V (PP MODE) Symbol TRST TAS TAH TCWH TOES TOEH TOEP TOET TWP TWPH TDS TDH TIDA TBP TSE TBE TSCE Parameter RST# High to Row Address Setup R/C# Address Setup Time R/C# Address Hold Time R/C# to Write Enable High Time OE# High Setup Time OE# High Hold Time OE# to Data# Polling Delay OE# to Toggle Bit Delay WE# Pulse Width WE# Pulse Width High Data Setup Time Data Hold Time Software ID Access and Exit Time Byte Programming Time Sector-Erase Time Block-Erase Time Chip-Erase Time 100 100 50 5 150 20 25 25 100 Min 1 50 50 50 20 20 40 40 Max Units s ns ns ns ns ns ns ns ns ns ns ns ns s ms ms ms T22.0 1235 TABLE 23: RESET TIMING PARAMETERS, VDD=3.0-3.6V (PP MODE) Symbol TPRST TRSTP TRSTF TRST1 TRSTE TRSTC Parameter VDD stable to Reset Low RST# Pulse Width RST# Low to Output Float RST# High to Row Address Setup RST# Low to reset during Sector-/Block-Erase or Program RST# Low to reset during Chip-Erase 1 10 50 Min 1 100 48 Max Units ms ns ns s s s T23.0 1235 1. There may be additional reset latency due to TRSTE or TRSTC if a reset procedure is performed during a Program or Erase operation. (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 33 8 Mbit LPC Flash SST49LF080A Data Sheet VDD TPRST Addresses Row Address R/C# RST# TRSTP TRSTE Sector-/Block-Erase or Program operation aborted Chip-Erase aborted TRSTC TRSTF TRST DQ7-0 1235 F16.0 FIGURE 16: RESET TIMING DIAGRAM (PP MODE) RST# Addresses TRST Row Address TAS TAH TRC Column Address TAS TAH Row Address Column Address R/C# WE# OE# TOE TOLZ High-Z VIH TAA TOH TOHZ Data Valid High-Z DQ7-0 1235 F17.0 FIGURE 17: READ CYCLE TIMING DIAGRAM (PP MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 34 8 Mbit LPC Flash SST49LF080A Data Sheet TRST RST# Addresses Row Address TAS R/C# TCWH OE# WE# DQ7-0 TDH TDS Data Valid 1235 F18.0 Column Address TAS TAH TOEH TWPH TAH TOES TWP FIGURE 18: WRITE CYCLE TIMING DIAGRAM (PP MODE) Addresses Row Column R/C# WE# OE# TOEP DQ7 D D# D# D 1235 F19.0 FIGURE 19: DATA# POLLING TIMING DIAGRAM (PP MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 35 8 Mbit LPC Flash SST49LF080A Data Sheet Addresses Row Column R/C# WE# OE# TOET DQ6 D D 1235 F20.0 FIGURE 20: TOGGLE BIT TIMING DIAGRAM (PP MODE) A14-0 (Internal AMS-0) R/C# OE# WE# DQ7-0 5555 2AAA 5555 BA Internal Program Starts AA 55 A0 DATA BA = Byte-Program Address AMS = Most Significant Address 1235 F21.0 FIGURE 21: BYTE-PROGRAM TIMING DIAGRAM (PP MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 36 8 Mbit LPC Flash SST49LF080A Data Sheet A14-0 (Internal AMS-0) R/C# OE# WE# 5555 2AAA 5555 5555 2AAA SAX Internal Erase Starts DQ7-0 AA SAX = Sector Address 55 80 AA 55 30 1235 F22.0 FIGURE 22: SECTOR-ERASE TIMING DIAGRAM (PP MODE) A14-0 (Internal AMS-0) R/C# OE# WE# 5555 2AAA 5555 5555 2AAA BAX Internal Erase Starts DQ7-0 AA BAX = Block Address 55 80 AA 55 50 1235 F23.0 FIGURE 23: BLOCK-ERASE TIMING DIAGRAM (PP MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 37 8 Mbit LPC Flash SST49LF080A Data Sheet A14-0 (Internal AMS-0) R/C# OE# WE# 5555 2AAA 5555 5555 2AAA 5555 Internal Erase Starts DQ7-0 AA 55 80 AA 55 10 1235 F24.0 FIGURE 24: CHIP-ERASE TIMING DIAGRAM (PP MODE) A14-0 (Internal AMS-0) R/C# OE# 5555 2AAA 5555 0000 0001 TWP WE# DQ7-0 TWPH AA 55 90 TIDA TAA BF Device ID 1235 F25.0 Note: Device ID = 5BH for SST49LF080A FIGURE 25: SOFTWARE ID ENTRY AND READ (PP MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 38 8 Mbit LPC Flash SST49LF080A Data Sheet A14-0 (Internal AMS-0) R/C# OE# WE# DQ7-0 5555 2AAA 5555 TIDA AA 55 F0 1235 F26.0 FIGURE 26: SOFTWARE ID EXIT (PP MODE) VIHT INPUT VIT REFERENCE POINTS VOT OUTPUT VILT 1235 F27.0 AC test inputs are driven at VIHT (0.9 VDD) for a logic "1" and VILT (0.1 VDD) for a logic "0". Measurement reference points for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% 90%) are <3 ns. Note: VIT - VINPUT Test VOT - VOUTPUT Test VIHT - VINPUT HIGH Test VILT - VINPUT LOW Test FIGURE 27: AC INPUT/OUTPUT REFERENCE WAVEFORMS TO TESTER TO DUT CL 1235 F28.0 FIGURE 28: A TEST LOAD EXAMPLE (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 39 8 Mbit LPC Flash SST49LF080A Data Sheet Address: 5555H Write Data: AAH Cycle: 1 Read Command Sequence Address: AIN Read Data: DOUT Cycle: 1 Address: 2AAAH Write Data: 55H Cycle: 2 Address: 5555H Write Data: A0H Cycle: 3 Available for Next Command 1235 F29.0 Address: AIN Write Data: DIN Cycle: 4 Wait TBP Available for Next Byte 1235 F30.0 FIGURE 29: READ FLOWCHART (LPC MODE) FIGURE 30: BYTE-PROGRAM FLOWCHART (LPC MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 40 8 Mbit LPC Flash SST49LF080A Data Sheet Block-Erase Command Sequence Address: 5555H Write Data: AAH Cycle: 1 Sector-Erase Command Sequence Address: 5555H Write Data: AAH Cycle: 1 Address: 2AAAH Write Data: 55H Cycle: 2 Address: 2AAAH Write Data: 55H Cycle: 2 Address: 5555H Write Data: 80H Cycle: 3 Address: 5555H Write Data: 80H Cycle: 3 Address: 5555H Write Data: AAH Cycle: 4 Address: 5555H Write Data: AAH Cycle: 4 Address: 2AAAH Write Data: 55H Cycle: 5 Address: 2AAAH Write Data: 55H Cycle: 5 Address: BAX Write Data: 50H Cycle: 6 Address: SAX Write Data: 30H Cycle: 6 Wait TBE Wait TSE Block erased to FFH Sector erased to FFH Available for Next Command Available for Next Command 1235 F31.0 FIGURE 31: ERASE COMMAND SEQUENCES FLOWCHART (LPC MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 41 8 Mbit LPC Flash SST49LF080A Data Sheet Software Product ID Entry Command Sequence Address: 5555H Write Data: AAH Cycle: 1 Software Product ID Exit Command Sequence Address: 5555H Write Data: AAH Cycle: 1 Address: XXXXH Write Data: F0H Cycle: 1 Address: 2AAAH Write Data: 55H Cycle: 2 Address: 2AAAH Write Data: 55H Cycle: 2 Wait TIDA Address: 5555H Write Data: 90H Cycle: 3 Address: 5555H Write Data: F0H Cycle: 3 Available for Next Command Wait TIDA Wait TIDA Address: 0001H Read Data: BFH Cycle: 4 Available for Next Command Address: 0002H Read Data: Cycle: 5 Available for Next Command Note: X can be VIL or VIH, but no other value. 1235 F32.0 FIGURE 32: SOFTWARE PRODUCT ID COMMAND SEQUENCES FLOWCHART (LPC MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 42 8 Mbit LPC Flash SST49LF080A Data Sheet Start Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: A0H Address: 5555H Load Byte Address/Byte Data Wait for end of Program (TBP, Data# Polling bit, or Toggle bit operation) Program Completed 1235 F33.0 FIGURE 33: BYTE-PROGRAM COMMAND SEQUENCES FLOWCHART (PP MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 43 8 Mbit LPC Flash SST49LF080A Data Sheet Internal Timer ByteProgram/Erase Initiated Toggle Bit ByteProgram/Erase Initiated Data# Polling ByteProgram/Erase Initiated Wait TBP, TSCE, TBE, or TSE Read byte Read DQ7 Program/Erase Completed Read same byte No Is DQ7 = true data? Yes No Does DQ6 match? Yes Program/Erase Completed Program/Erase Completed 1235 F34.0 FIGURE 34: WAIT OPTIONS FLOWCHART (PP MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 44 8 Mbit LPC Flash SST49LF080A Data Sheet Software Product ID Entry Command Sequence Software Product ID Exit Command Sequence Write data: AAH Address: 5555H Write data: AAH Address: 5555H Write data: F0H Address: XXH Write data: 55H Address: 2AAAH Write data: 55H Address: 2AAAH Wait TIDA Write data: 90H Address: 5555H Write data: F0H Address: 5555H Return to normal operation Wait TIDA Wait TIDA Read Software ID Return to normal operation 1235 F35.0 FIGURE 35: SOFTWARE PRODUCT ID COMMAND SEQUENCES FLOWCHART (PP MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 45 8 Mbit LPC Flash SST49LF080A Data Sheet Chip-Erase Command Sequence Write data: AAH Address: 5555H Block-Erase Command Sequence Write data: AAH Address: 5555H Sector-Erase Command Sequence Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: 55H Address: 2AAAH Write data: 55H Address: 2AAAH Write data: 80H Address: 5555H Write data: 80H Address: 5555H Write data: 80H Address: 5555H Write data: AAH Address: 5555H Write data: AAH Address: 5555H Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: 55H Address: 2AAAH Write data: 55H Address: 2AAAH Write data: 10H Address: 5555H Write data: 50H Address: BAX Write data: 30H Address: SAX Wait TSCE Wait TBE Wait TSE Chip erased to FFH Block erased to FFH Sector erased to FFH 1235 F36.0 FIGURE 36: ERASE COMMAND SEQUENCE FLOWCHART (PP MODE) (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 46 8 Mbit LPC Flash SST49LF080A Data Sheet PRODUCT ORDERING INFORMATION Device Speed Suffix1 XX Suffix2 XX Package Modifier H = 32 leads Package Type N = PLCC W = TSOP (type 1, die up, 8mm x 14mm) Operating Temperature C = Commercial = 0C to +85C Minimum Endurance 4 = 10,000 cycles Serial Access Clock Frequency 33 = 33 MHz Version Device Density 080 = 8 Mbit Voltage Range L = 3.0-3.6V SST49LF0x0A - XXX Valid combinations for SST49LF080A SST49LF080A-33-4C-WH SST49LF080A-33-4C-NH Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. Non-Pb: All devices in this data sheet are also offered in non-Pb (no lead added) packages. The non-Pb part number is simply the standard part number with the letter "E" added to the end of the package code. The non-Pb package codes corresponding to the packages listed above are WHE and NHE. (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 47 8 Mbit LPC Flash SST49LF080A Data Sheet PACKAGING DIAGRAMS TOP VIEW Optional Pin #1 Identifier .048 .042 .495 .485 .453 .447 2 1 32 SIDE VIEW .112 .106 .020 R. MAX. .029 x 30 .023 .040 R. .030 BOTTOM VIEW .042 .048 .595 .553 .585 .547 .032 .026 .021 .013 .400 .530 BSC .490 .050 BSC .015 Min. .050 BSC .095 .075 .140 .125 .032 .026 Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (max/min). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches. 4. Coplanarity: 4 mils. 32-plcc-NH-3 32-LEAD PLASTIC LEAD CHIP CARRIER (PLCC) SST PACKAGE CODE: NH (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 48 8 Mbit LPC Flash SST49LF080A Data Sheet Pin # 1 Identifier 1.05 0.95 0.50 BSC 8.10 7.90 0.27 0.17 12.50 12.30 DETAIL 1.20 max. 0.70 0.50 14.20 13.80 0.15 0.05 0- 5 0.70 0.50 Note: 1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent. 1mm 2. All linear dimensions are in millimeters (max/min). 3. Coplanarity: 0.1 mm 4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads. X 32-tsop-WH-7 32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 8MM SST PACKAGE CODE: WH 14MM TABLE 24: REVISION HISTORY Number 00 Description Date Apr 2003 * Initial release (SST49LF080A previously released in data sheet S71206) Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com (c)2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 49 |
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